The deposition of uniform arrays of CdTe/CdS heterostructures suitable for solar cells via close-spaced sublimation is presented. The approach used to create the arrays consists of two basic steps: the deposition of a patterned growth mask on CdS, and the selective-area deposition of CdTe. CdTe grains grow selectively on the CdS but not on the SiO 2 due to the differential surface mobility between the two surfaces. Furthermore, the CdTe mesas mimic the size and shape of the window opening in the SiO 2 . Measurements of the current density in the CdTe were high at 28 mA/cm 2 . To our knowledge, this is the highest reported current density for these devices. This implies that either the quantum efficiency is very high or the electrons generated throughout the CdTe are being concentrated by the patterned structure analogous to solar concentration. The enhancement in crystal uniformity and the relatively unexplored current concentration phenomenon could lead to significant performance improvements.

No abstract

Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480°C and 540°C, maintaining an average constant source-substrate temperature difference DT of $130°C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 lm/h to 4 lm/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe (111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.

Cathodoluminescence emission of hydrothermally grown antimony doped ZnO nanostructures with different antimony doping (2.5, 4.8, and 11.8 at%) was studied in a scanning electron microscope (CL-SEM). Incorporation of antimony results in formation of mostly nanorods with low aspect ratio together with some Sb-rich nanoparticles. Transmissibn electron microscopy (TEM) of the Sb-doped samples revealed delaminated {10-10} planes produced by antimony surface segregation. CL spectra of the as-grown samples revealed well defined emission bands centered at 3.2, 2.74 and 2.0 eV, attributed to excitonic recombination, and the so-called blue and yellow emissions, respectively. It was observed that the intensity of the blue emission depends strongly on antimony content, suggesting the formation of point defects on Sb doping. While the yellow emission red-shifted after thermal annealing, either in argon or oxygen atmosphere, the intensity of the blue band decreases considerably; such behavior is explained through the reduction of the population of Zn(i) defects.

No abstract