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The annealing of postimplantation defects in heavily damaged silicon single crystals is studied by backscattering, X‐ray topography, and transmission electron microscopy. It is shown that a dose‐dependent mechanism exists which prevents epitaxial restitution of the damaged lattice during annealing. The critical dose required to improve the annealing results is determined. The interpretation of the transition from the amorphous to the crystalline phase is given.

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