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The regularities of polymorphism in high purity crystalline tris(8 hydroxyquinoline) aluminum, gallium, and indium (Meq 3 ) have been studied in the temperature range of 300-712 K. From the results of an analysis of photoluminescence and Raman spectra and X ray diffraction data, a generalized picture has been produced, according to which, for all the studied compounds, a series of polymorphic transitions is the same: β → α → δ → γ → ε. Based on high purity single phase specimens of the investigated metal complexes and boron oxide, new hybrid materials have been synthesized: bulk samples (alloying technique) and thin films (vacuum thermal evaporation). The photo and electroluminescent properties of the hybrid materials at room temperature have been investigated. It has been established that, as the synthesis duration of the bulk hybrid mate rials increases from 5 to 60 min, a photoluminescence maximum shifts to a short wavelength domain from the value typical of pure δ(γ) Meq 3 by 40, 15, and 10 nm for Alq 3 , Gaq 3 , and Inq 3 , respectively.

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