Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO 2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V -characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.

Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sensor technology. A key aspect of this miniaturization is the influence of the structure size on the electrical and optical properties of μLEDs. Thus, in this article, investigations of the size dependence of the electro-optical properties of μLEDs, with diameters in the range of 20 to 0.65 μm, by current–voltage and electroluminescence measurements are described. The measurements indicated that with decreasing size leakage currents in the forward direction decrease. To take advantage of these benefits, the surface has to be treated properly, as otherwise sidewall damages induced by dry etching will impair the optical properties. A possible countermeasure is surface treatment with a potassium hydroxide based solution that can reduce such defects.

Micro-light emitting diodes (µ-LEDs) suffer from a drastic drop in internal quantum efficiency that emerges with the miniaturization of pixels down to the single micrometer size regime. In addition, the light extraction efficiency (LEE) and far field characteristics change significantly as the pixel size approaches the wavelength of the emitted light. In this work, we systematically investigate the fundamental optical properties of nitride-based µ-LEDs with the focus on pixel sizes from 1 µm to 5 µm and various pixel sidewall angles from 0∘ to 60∘ using finite-difference time-domain simulations. We find that the LEE strictly increases with decreasing pixel size, resulting in a LEE improvement of up to 45% for a 1 µm pixel compared to a 20 µm pixel. The ideal pixel sidewall angle varies between 35∘ and 40∘, leading to a factor of 1.4 enhancement with respect to vertical pixel sidewalls. For pixel sizes in the order of 2 µm and smaller, a substantial transition of far field properties can be observed. Here, the far field shape depends severely on the pixel sidewall angle and affects the LEE within a solid angle of ±15∘. Moreover, we investigate the impact of emission wavelength and observe major differences in optical characteristics for blue, green and red emitting pixels, which is relevant for real-world applications. Finally, we discuss the implications of the assumptions we made and their significance for the design of µ-LEDs.

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