Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10 5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm 2 and making entire device area sensitive.

No abstract

No abstract

No abstract