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Double-mesa type SiGe heterojunction bipolar transistors (HBTs) have been improved by increasing the base Gumme1 number and by using a thin, highly doped launcher layer between the base and the collector. In addition] the contact resistance of the base contact has been reduced. Hence, it was possible to obtain a record maximum frequency of oscillation up to 160 GHz for a 2-emitter finger HBT in common emitter configuration.

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