For the investigation of 2D layered materials such as graphene, transition-metal dichalcogenides, boron nitride, and their heterostructures, dedicated substrates are required to enable unambiguous identification through optical microscopy. A systematic study is conducted, focusing on various 2D layered materials and substrates. The simulated colors are displayed and compared with microscopy images. Additionally, the issue of defining an appropriate index for measuring the degree of visibility is discussed. For a wide range of substrate stacks, layer thicknesses for optimum visibility are given along with the resulting sRGB colors. Further simulations of customized stacks can be conducted using our simulation tool, which is available for download and contains a database featuring a wide range of materials. V C 2015 AIP Publishing LLC.

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The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the channel. In this proof-of-concept study we present a versatile graphene heterostructure platform with three buried individually addressable gate electrodes. The platform is based on a vertical stack of embedded titanium and graphene separated by an intermediate oxide to provide an almost planar surface. We demonstrate the functionality and advantages of the platform by exploring transfer and output characteristics at different temperatures of carbon nanotube field-effect transistors with different electrostatic doping configurations. Furthermore, we back up the concept with finite element simulations to investigate the surface potential. The presented heterostructure is an ideal platform for analysis of electrostatic doping of low-dimensional materials for novel low-power transistor devices.

Memristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching.