Polyaniline/multi-walled carbon nanotube composites (PANI/MWCNT), with various concentration of multiwalled carbon nanotube, were synthesized. Several Schottky diodes were fabricated, where PANI or PANI/MWCNT composites, aluminum, and gold were used as semiconductor, Schottky contact, and ohmic contact, respectively. Then current-voltage characteristics of the fabricated diodes were measured at room temperature and within the bias range of −5 to + 5 V. The measurements were repeated three times for each sample to verify repeatability of experiment. The obtained results show that by increasing the MWCNT concentration, the current intensity increases. Furthermore, I-V characteristics of pure polyaniline Schottky diode follows the thermionic emission mechanism while the I-V characteristics of Schottky diodes based on PANI/MWCNT composites show two distinct power law regions. At lower voltages, the mechanism follows Ohm's Law, whereas at higher voltages, the mechanism is compatible with space charge limited conduction emission mechanism. The parameters of Schottky diodes were determined, and it was observed that critical voltage decreased when the concentration of MWCNT in the composite increased.

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In this work polyaniline was chemically synthesized. Schottky diode was fabricated based on polyaniline as p-type semiconductor, gold as Ohmic contact and aluminum as Schottky contact. Coating of metals was carried out with physically vapour deposition method and coating of polymer was done with solvent casting method. Current-voltage (I-V) characteristics of diode were measured and current transport mechanism of diode was studied. I-V characteristics showed that Schottky diode based on pure polyaniline follows the thermionic emission mechanism. The electronic parameters of Schottky diode such as ideality factor, barrier height and reverse saturation current have been determined.