High pressure luminescence studies have been made on several tris rare earth betadiketonates. From this information the pathway for intramolecular energy transfer between ligand and rare earth ion localized levels is clearly established. The emission from europium dibenzoylmethide (EuDBM) and europium thenoyl-triflnoroacetylacetonate (EuTTF) is examined in depth. Further studies are presented on other Eu chelates as well as on samarium and terbium complexes. A brief discussion of the effects of pressure on processes internal to the rare earth ion or the ligand is also presented.

The parameters of trapping centers in CVD diamond and Diamond-Like Carbon (DLC) films were studied by Charge Deep Level Transient Spectroscopy (Q-DLTS). The concentrations, activation energies, captures cross-section and location of the trapping centers were determined. The influence of post deposition heat treatment on the defect center parameters was studied. The Q-DLTS measurements showed that micro defects are acting as point trapping centers and have the continuous energy spectrum with one or two maximums at different energies. The nature of the trapping centers is discussed.

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 °C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H2) as co-reactant. This process was developed in a Veeco NEXUS™ chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4–0.5 Å/cycle were achieved. Low electrical resistivity (<300 μΩ cm), high mass density (>4 g/cm3), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

Characterization of the ion energy distribution function (IEDF) of low energy high current density ion beams by conventional retarding field and deflection type energy analyzers is limited due to finite ion beam emittance and beam space charge spreading inside the analyzer. These deficiencies are, to a large extent, overcome with the recent development of the variable-focusing retarding field energy analyzer (RFEA), which has a cylindrical focusing electrode preceding the planar retarding grid. The principal concept of this analyzer is conversion of a divergent charged particle beam into a quasiparallel beam before analyzing it by the planar retarding field. This allows analysis of the beam particle total kinetic energy distribution with greatly improved energy resolution. Whereas this concept was first applied to analyze 5-10 keV pulsed electron beams, the present authors have adapted it to analyze the energy distribution of a low energy (

No abstract