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The "V( He, d)' Cr reaction has been studied at 15 MeV using the tandem Van de Graaff accelerator and the multichannel magnetic spectrograph of the Nuclear Physics Laboratory, Oxford. Angular distributions have been measured for levels up to E"=8. 6 MeV over the laboratory angular range 8=3.75 '-71. 25'. Data are analyzed in terms of the distorted wave Born approximation theory of the direct reaction. The l transfers and the spectroscopic factors are obtained.PACS number(s): 25.55. Hp, 27.40.+z

This paper presents a study of board-level interconnection requirements for highly parallel and massively parallel computing. Analytical models of the I/O bandwidth of popular interconnection networks have been developed and show that current electronic technologies are poor in supporting the necessary I/O density and bandwidth. Optical interconnects appear to offer greater potential in meeting these I/O requirements. Several possible optical implementations of interconnecting a network of electronic processors are compared. The use of polymer waveguides appears to offer the best solution compatible with existing multiboard system architectures.

2D/3D Analytical Field Model + Solvers + characterizati ons Commonly used numerical methods in capacitance extraction both for small and large circuit blocks are reviewed for a VLSI design. Boundary element based field solvers can effectively be used for small structures but can not be used for large structures because of large grid requirement. Field solvers based on random walk method are more appropriate for large structures but still they are quite slow in comparison to analytic capacitance models, which are generally applied for chip level extractions. Accounting for 3 0 fringing fields has become essential in analytic models for accurate extraction of current VLSI technologies.