A photoelectric response of a Bi12SiO20 crystal grown in an argon atmosphere on a linearly polarized light (which is referred to as the linear photogalvanic effect) is reported for the first time in the nanosecond-time domain. Optimal geometry for detection of the photo-induced current concerning the orientation of the polarization state of the incident light in respect to the crystallographic axes of a sample was determined considering both the natural optical activity and light absorption of sillenite crystals. Spectral dependence of the photogalvanic current was measured in the visible part (410 - 610 nm) of the spectrum. Temporal shape of light-induced electric-current pulses observed at different experimental conditions is discussed. Obtained results are believed to show that sillenite crystals are very prospective for development of different ultra-fast optoelectronics devices.

Coupling of two waves with different polarization states in a photorefractive crystal under an ac electric field allows us to achieve the linear transformation of a small transient phase shift into the intensity modulation without any output polarization filtering. This can lead to design of an adaptive interferometer with sensitivity that reaches the classical homodyne detection limit.

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We observe electric pulses generated in sillenite crystals (Bi 12 SiO 20 and Bi 12 TiO 20 ) by 100-fs laser pulses at the wavelength of 400 nm (below the band gaps of both crystals). The peak value of the current pulses scales linearly with the intensity of laser pulses up to ∼45 GW/cm 2 . The direction of the induced current depends on the polarization state of the laser pulse. This polarization dependence and features of the current detection via charge accumulation at the sample electrodes allow us to conclude that the electric pulses are generated due to the linear photogalvanic effect.