Resistance to electrostatic charges is one of the most important problems limiting the very large scale integrated circuits reliability. Increased currents cause the degradation of the instruments characteristics, similar to the degradation that occurs when hot electrons stream passes through. In order to increase the very large scale integrated circuits reliability, under hot electrons occurrence, exposure to ionizing radiation, electrostatic charges, and ion treatment, it is necessary to study the MIS transistors parameters degradation mechanisms. The results of the study show that the maximum the threshold voltage shift occurs when aluminum is sprayed onto the structure with a floating gate. The reason for the MIS transistors characteristics degradation is the charges of the gate electrode and the current in the oxide arising from strong electric fields. The degree of characteristics degradation in the hot electrons injection case does not depend on the energy of the ions bombarding the substrate surface.

In this work we studied the effect of surface treatment of PET films, which are widely used in food packaging, on the adhesion value of ink layers based on polyvinyl chloride. To give high barrier properties to packaging laminates, the films used in their structure are coated with a nanolayer of aluminum oxide (AlOx). However, these films have a disadvantage associated with the low adhesion of adhesive and ink layers to the AlOx nanolayer. To eliminate this disadvantage, aluminium oxide nanolayer is additionally coated with various polymer coatings. In this work we studied the effect of a polyacrylic coating applied on top of an AlOx layer on improving the adhesion of ink layers. For PET films used in food packaging, optical and surface properties are also important. In this regard, additionally we measured surface free energy, coefficient of friction, and optical properties of the studied PET films. We also highlight the relationship of contact angles of wetting and the work of adhesion for the printing ink with the measured adhesion of ink layers.

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Scaling of very-large-scale integration (VLSI) circuits develops in the direction of increasing the surface of a crystal, packing density of elements on crystals, and miniaturization of components. These processes are limited by the necessity to provide high microelectronic reliability and sufficient percentage yield. For this reason, it is important to study the characteristics of thin oxide coating, as well as to investigate the degradation processes of metal oxide semiconductor (MOS) structures, made via nitriding gate oxide with the exposure to hot electrons and ionizing radiation.