No abstract

No abstract

-An InAs/GaAs0. 86Sb0.14 QDSC and a GaAsSb control cell were investigated using temperature dependent J-V, external quantum efficiency (EQE), photoluminescence (PL) and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix materials are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL) further indicate the prevalence of non-radiative processes at elevated temperatures in these systems. These findings are supported by a reduction in the open circuit voltage at elevated temperatures in these devices.