Intrinsicand RadHard-by-Design hardness characterization has been performed on a 130nm fab process. Hardness results from test chips produced in phase II of a NASA Goddard Space Flight Center contract are presented.

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A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration [1]. The Single Event Effects (SEE) performance is reported.