Articles you may be interested inSelf-assembled monolayers of poly(ethylene glycol) siloxane as a resist for ultrahigh-resolution electron beam lithography on silicon oxide Nonstatistical degradation and development characteristics of poly(methylmethacrylate) based resists during electron beam exposure Electron beam lithography of nanostructures using 2-propanol:water and 2-propanol:methyl isobutyl ketone as developers for poly-methylmethacrylate J.Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate ͑PMMA͒ resist residues on SiO 2 surfaces after electron beam exposure and resist development. It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

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