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Photoluminescence is used to study the behavior of CAs-related and GaAs cation antisite defect centers in GaAs under hydrostatic pressure at 10 K. The pressure coefficients, α, for these transitions were determined. We found α(CAs) to be about 12 meV/kbar which is very close to the band edge pressure dependence. The GaAs center demonstrated only slightly smaller coefficient. This makes the binding energy of CAs and GaAs, at 26 and 77 meV, respectively, almost independent of pressure. At pressures above 30 kbar relatively strong transitions were observed that displayed very small pressure dependence. The deepening of the ΓX-mixed donor levels interacting with these acceptor levels are primarily responsible for small pressure coefficients of the transitions above 30 kbar. A deepening of ∼160 meV is observed for the donors.

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