The CMS pixel detector is the innermost tracking device at the LHC, reconstructing interaction vertices and charged particle trajectories. The current planar sensors located in the innermost layer of the pixel detector will be exposed to very high fluences which will degrade their performances. As a possible replacement for planar pixel sensors in the High Luminosity-LHC (HL-LHC), 3D silicon technology is under consideration due to its expected good performance in harsh radiation environments. Studies are also in progress for using 3D silicon pixel detectors in near-beam proton spectrometers at the LHC. Deep Reactive Ion Etching (DRIE) plays a key role in fabricating 3D silicon detectors in which readout and ohmic electrodes are processed through the silicon substrate instead of being implanted on the silicon surface. 3D pixel devices considered in this study were processed at FBK (Trento, Italy), bump bonded to the CMS pixel readout chip, and characterized in the laboratory. Numerical simulations were also carried out. We report on selected results from laboratory measurements and TCAD simulations.

Abstract:Diamond sensors are studied as an alternative to silicon sensors to withstand the high radiation doses that are expected in future upgrades of the pixel detectors for the SLHC. Diamond pixel sensors are intrinsically radiation hard and are considered as a possible solution for the innermost tracker layers close to the interaction point where current silicon sensors cannot cope with the harsh radiation environment. An effort to study possible candidates for the upgrades is undergoing using the Fermilab test-beam facility, FTBF, where diamonds and 3D silicon sensors have been studied. Using a CMS pixel-based telescope built and installed at the FTBF, we are studying charge collection efficiencies for un-irradiated and irradiated devices bump-bonded to the CMS PSI46 pixel readout chip. A description of the test-beam effort and preliminary results on diamond sensors will be presented.

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on preand post-irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.

Abstract-The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been realized with advancements in MEMS technology. Since the fabrication of the first 3D prototype in Stanford Nanofabrication Facility in 1997, a significant effort has been put forth to transfer the 3D detector technology to large scale manufacturing for future high luminosity collider experiments, in which the radiation hardness will be the primary concern, and other applications such as medical imaging and X-ray imaging for molecular biology. First, alternative 3D structures, single type column (STC) and doubleside double type column (DDTC) 3D detectors, were produced at FBK-irst (Trento, Italy) and CNM-Barcelona (Spain), and assessed thoroughly to improve the production technology towards the standard full-3D detectors. The 3D collaboration has been extended to include SINTEF (Norway), which is committed to small to medium scale production of active edge full-3D silicon sensors. This paper focuses on p-type 3D detectors compatible with the CMS pixel front end electronics from the second run of fabrication at SINTEF clean room facilities. The sensors that passed the wafer level electrical characterization have been bump-bonded at IZM (Germany), assembled into modules and wire-bonded for functional characterization at Purdue University. We report the leakage current characteristics, bumpbond quality, threshold, noise, and gain measurement results of these 3D modules as well as the preliminary beam test data taken at Fermi National Accelerator Laboratory.

AAM) is copyrighted and published by Elsevier. It is posted here by agreement between Elsevier and the University of Turin. Changes resulting from the publishing process -such as editing, corrections, structural formatting, and other quality control mechanismsmay not be reflected in this version of the text. The definitive version of the text was subsequently published in: "Nuclear Instruments and Methods in Physics Research Section A: Accelerators,