The influence of fluctuations and periodical driving on temporal characteristics of short overdamped Josephson junctions is analyzed. We obtain the standard deviation of the switching time in the presence of a dichotomous driving force for arbitrary noise intensity and in the frequency range of practical interest. For sinusoidal driving the resonant activation effect has been observed. The mean switching time and its standard deviation have a minimum as a function of driving frequency. As a consequence the optimization of the system for fast operation will simultaneously lead to the minimization of timing errors.

Bolometers for balloon and space missions have seen extensive development because of their capacity to test primordial conditions of the Universe. The major improvements consist in lowering the operating temperature to reach higher sensitivities. Here we show that an array of 192 cold-electron bolometers (CEB) demonstrates photon-noise-limited operation at the cryostat temperature of 310 mK due to effective self-cooling of the absorber. The direct electron cooling of nanoabsorber placed between normal metal-insulator-superconductor junctions has considerably higher efficiency than indirect cooling through massive suspended platform, that requires overcoming a weak electron-phonon conductance. The electron temperature reached 120 mK without a power load, and 225 mK with a 60 pW power load with self-noise of a single bolometer below 3 Á 10 À18 W Hz À1=2 at a 0.01 pW power load. This bolometer works at electron temperature less than phonon temperature, thus being a good candidate for future space missions without the use of dilution refrigerators.

We demonstrate the narrow switching distribution of an underdamped Josephson junction from the zero to the finite voltage state at millikelvin temperatures. We argue that such junctions can be used as ultrasensitive detectors of the single photons in the GHz range, operating close to the quantum limit: a given initial (zero voltage) state can be driven by an incoming signal to the finite voltage state. The width of the switching distribution at a nominal temperature of about T = 10 mK was 4.5 nA, which corresponds to an effective noise temperature of the device below 60 mK.