The scaling up of conventional distributed electron cyclotron resonance plasmas presents limitations in terms of plasma density, limited to the critical density, and of uniformity, due to the difficulty of achieving constant amplitude standing wave patterns along linear microwave applicators in the metre range. The alternative solution presented in this study is the extension of the concept of distribution from one-to two-dimensional networks of elementary plasma sources sustained at electron cyclotron resonance (ECR). With the so-called multi-dipolar plasmas, large size and uniform low-pressure plasmas are produced from a two-dimensional network of elementary, independent plasma sources sustained at ECR. Each elementary plasma source consists of a permanent magnet on which microwaves are applied via an independent coaxial line. The plasma is produced by the electrons accelerated at ECR and trapped in the dipolar magnetic field of the magnet acting as a tri-dimensional magnetron structure. Large-size uniform plasmas can be obtained by assembling as many such elementary plasma sources as necessary, without any physical or technical limitations. Examples of two-dimensional networks are described and the performances in terms of density and uniformity of such plasma sources are presented. The interesting characteristics and advantages of multi-dipolar plasmas over distributed ECR plasmas are listed and the perspectives for plasma processing emphasized.

We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm−2 and protons cm−2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be and the damage constant for diamond irradiated with 800 MeV protons to be . Moreover, we observe the pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

Plasma scaling up can be achieved by distributing elementary microwave plasma sources over two or tri-dimensional networks. This concept is applied to a planar reactor comprising 4 × 3 microwave plasma sources distributed according to a square lattice matrix configuration. In each elementary plasma source, the plasma is produced at the end of a coaxial applicator implemented perpendicularly to the planar source. An argon plasma can be sustained in the medium pressure range from 7.5 to 750 Pa. The sheet of plasma thus obtained becomes uniform at a distance from the source plane of 15 mm, i.e. less than half the 40 mm lattice mesh. Using a cylindrical Langmuir probe, plasma density and electron temperature have been investigated as functions of pressure and microwave power. Results show that the plasma can reach densities between 10 12 and 10 13 cm −3 with a uniformity better than ±3.5%.