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This paper proposes a new generation SiC MOSFET based avionic power supply. Efficient use of energy and materials and a drastic reduction of greenhouse emissions and noise footprints are the key motivations behind the more electric aircraft. In one of such aircraft electrical systems, the main DC bus is generally kept at 270V and many critical and bidirectional loads require 28V input. Hence, an efficient bidirectional DC-DC converter is required for this purpose. Dual active bridge with HF transformer isolation is one of the best choices for such applications. Another important aspect in avionic systems is to reduce the size and weight of the system. By increasing the DC-DC converter operating frequency the size of the magnetic components can be reduced. However, this is achieved with the increased switching losses and associated cooling requirements. The recent advancements in SiC device technology have helped to improve the switching performance and allowed the operation at higher temperature without degradation of its performance. Simulation and experimental evaluations of 1kW labprototype are presented.

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With the introduction of the more electric aircraft, there is growing emphasis on improving overall efficiency and thus gravimetric and volumetric power density, as well as smart functionalities and safety of an aircraft. In future on-board power distribution networks, so-called high voltage DC (HVDC, typically +/−270VDC) supplies will be introduced to facilitate distribution and reduce the associated mass and volume, including harness. Future aircraft power distribution systems will also very likely include energy storage devices (probably, batteries) for emergency back up and engine starting. Correspondingly, novel DC-DC conversion solutions are required, which can interface the traditional low voltage (28 V) DC bus with the new 270 V one. Such solutions presently need to cater for a significant degree of flexibility in their power ratings, power transfer capability and number of inputs/outputs. Specifically, multi-port power-scalable bi-directional converters are required. This paper presents the design and testing of such a solution, addressing the use of leading edge wide-band-gap (WBG) solid state technology, especially silicon carbide (SiC), for use as high-frequency switches within the bi-directional converter on the high-voltage side.