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This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1 . Scaling relationships are presented which show how a conventional MOS-FET can be reduced in size. An improved small device structure is presented that uses ion implantation to provide shallow source and drain regions and a nonuniform substrate doping profile. Onedimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.

This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1 . Scaling relationships are presented which show how a conventional MOS-FET can be reduced in size. An improved small device structure is presented that uses ion implantation to provide shallow source and drain regions and a nonuniform substrate doping profile. Onedimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.

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A novel design of a thermionic generator for use on re-entry vehicles is analyzed analytically and experimentally. Equations are derived for prediction of the output current, output power, and conditions of maximum power for the device. The electrical power output potential of a typical re-entry vehicle is obtained by solving the temperature history of a thin-walled emitter. Given the wall temperature and the work function, the saturated Richardson current is easily obtained. Other parameters needed for predicting output power are obtained from curves in the literature. To simulate re-entry conditions, a test model was built and inserted in either a nitrogen or argon plasma jet. Graphite, thoriated tungsten, tungsten and molybdenum were used for the emitter and collector. Of the materials tested, graphite was the only material that met, to some degree, the qualifications needed for operation of the hypersonic plasma thermionic generator