The method of relativistic molecular dynamics is applied for accurate computational modeling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analyzed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron facility.

The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analysed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron (MAMI) facility.