High Idst enhancement is benefited from novel strained-Si process. However, it might cause reliability problems. Here we revealed the HCI degradation of strained-Si devices, which also can he correlated to I&, were worse than conventional bulk Si devices. Besides, it had high positive temperature coefficient in low voltages. Thus, it would be even worse at the operation voltage. [Keywords: hot carrier degradation, strained-Si, short channel.]
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