High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at −90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10−4 A/cm2 under −90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011 cm. Hz/W.

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging.

A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were ∼5.1 and ∼9.5 μm at 77 K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100 mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 × 10−7 A/cm2 under 100 mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 × 1012 cm·Hz/W at 77 K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 × 10−4 A/cm2 under −150 mV applied bias at 77 K, providing a specific detectivity value of 1.64 × 1011 cm·Hz/W.