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The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. The sample is exposed to the stream of methane gas CH4 at temperature of 1360 - 1380 ◦C and at normal pressure. Moreover, gas contains both the stable Carbon isotope C12 and the radioactive Carbon isotope C14, and hydrogen H2 in the gas acts as a carrier of Carbon.

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