Transition-metal dopants such as Mn determine the ferromagnetism in dilute magnetic semiconductors such as Ga(1-x)Mn(x)As. Recently, the acceptor states of Mn dopants in GaAs were found to be highly anisotropic owing to the symmetry of the host crystal. Here, we show how the shape of such a state can be modified by local strain. The Mn acceptors near InAs quantum dots are mapped at room temperature by scanning tunnelling microscopy. Dramatic distortions and a reduction in the symmetry of the wavefunction of the hole bound to the Mn acceptor are observed originating from strain induced by quantum dots. Calculations of the acceptor-state wavefunction in the presence of strain, within a tight-binding model and within an effective-mass model, agree with the experimentally observed shape. The magnetic easy axes of strained lightly doped Ga(1-x)Mn(x)As can be explained on the basis of the observed local density of states for the single Mn spin.
We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.
We show that the structure, properties, and concentration of vacancies in crystals can be studied by ultrasonic experiments previously employed for impurity centres only. Measurements of the temperature dependence of attenuation and phase velocities of ultrasonic shear waves of 52 MHz propagating along the crystallographic axis [110] of nominally pure ZnSe single crystals (grown by the seeded physical vapour transport method) show strong anomalies which are typical for relaxation processes in system with isolated Jahn–Teller (JT) centres. The observed JT distortion mode is trigonal, subject to a threefold orbitally degenerate T‐term interaction with trigonal and tetragonal nuclear displacements. In the absence of sufficiently high concentrations of impurity atoms with such properties we attributed the observed JT centres to zinc vacancies. The temperature dependence of the isothermal and adiabatic forms of the appropriate elastic modulus and the relaxation time show that the relaxation mechanism changes from thermal activation at higher temperatures to tunnelling through a potential energy barrier below 18 K. We provide an estimate of the magnitude of the potential barrier, as well as the pseudorotation frequency and concentration of vacancies. Also we determine the extremum points of the adiabatic potential energy surface of the vacancy centre.
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