Amorphous hydrogenated silicon carbonitride films were produced by remote plasma chemical vapor deposition (RP-CVD) from 1,1,3,3-tetramethyldisilazane (TMDSN) as the single-source compound using a H 2 -N 2 upstream-gas-mixture for plasma generation. The reactivity of particular TMDSN bonds in the RP-CVD initiation step has been examined using a hexamethyldisilazane model compound in the deposition experiments. The active species contributing to RP-CVD were identified by optical emission spectroscopic analysis of the plasma region. The films were examined using Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The effect of N 2 content in the H 2 -N 2 upstream-gasmixture on plasma generation of the active species, growth rate, chemical structure, and surface morphology of the resulting films is reported. {Electronic supplementary information (ESI) available: deconvoluted emission and IR spectra of a-Si-N-C-H films. See

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