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The last few decades have seen considerable progress in development of techniques for growing single crystal silicon film on insulator (SOI) substrates suitable for the fabrication of high performance devices. The SOI substrates promise to extend the range of applications including VLSI, memory, analog and digital integrated circuits and mixed signal applications. In this paper, the performance of SOI technology based SOI MOSFETs and schottky tunneling source SOI MOSFETs is reviewed. The SOI technology along with metallic S/D offers several benefits that enable scaling to sub 22nm gate lengths including extremely low S/D parasitic resistances, superior control of leakage current and elimination of bipolar latch up action. STS-FETs also benefits from the use of high-k dielectrics along with S/D engineering and gate engineering. Keywords -Erbium silicide, metal source/drain (S/D), platinum silicide, Schottky barriers (SBs).I.