Monolayered MoSe2 is a promising new material to investigate advanced light-matter coupling as it hosts stable and robust excitons with comparably narrow optical resonances. In this work, we investigate the evolution of the lowest lying excitonic transition, the so-called A-valley exciton, with temperature. We find a strong, phonon-induced temperature broadening of the resonance, and more importantly, a reduction of the oscillator strength for increased temperatures. Based on these experimentally extracted, temperature dependent parameters, we apply a coupled oscillator model to elucidate the possibility to observe the strong coupling regime between the A-exciton and a microcavity resonance in three prototypical photonic architectures with varying mode volumes. We find that the formation of exciton-polaritons up to ambient conditions in short, monolithic dielectric and Tamm-based structures seems feasible. In contrast, a temperature-induced transition into the weak coupling regime can be expected for structures with extended effective cavity length. Based on these findings, we calculate and draw the phase diagram of polariton Bosonic condensation in a MoSe2 cavity.

We present experimental and theoretical investigation of exciton recombination dynamics and the related polarization of emission in highly in-plane asymmetric nanostructures. Considering general asymmetry-and size-driven effects, we illustrate them with a detailed analysis of InAs/AlGaInAs/InP elongated quantum dots. These offer a widely varied confinement characteristics tuned by size and geometry that are tailored during the growth process, which leads to emission in the application-relevant spectral range of 1.25-1.65 µm. By exploring the interplay of the very shallow hole confining potential and widely varying structural asymmetry, we show that a transition from the strong through intermediate to even weak confinement regime is possible in nanostructures of this kind. This has a significant impact on exciton recombination dynamics and the polarization of emission, which are shown to depend not only on details of the calculated excitonic states but also on excitation conditions in the photoluminescence experiments. We estimate the impact of the latter and propose a way to determine the intrinsic polarization-dependent exciton light-matter coupling based on kinetic characteristics.

We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).