Novel high-temperature (> 150 "C ) ashing using mixture of H2 and He gases (H2Me) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320nm pitch Cdporous-MSQ (k =2.3) interconnects using 300mm wafers showed no degradation in leakage currents and wiring capacitance.It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.

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