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We have measured the temperature dependence of the electrical resistivity and thermal expansion of La1−xCexSn3, CeSn2In and LaSn2In from 300K to 1.5K. The CeSn3 system is interesting because a variety of previous measurements seem to suggest that the Ce ions within this system may display intermediate valence behavior. Both the thermal expansion measurements and resistivity data for these systems are presented and compared to both other known mixed valence systems and predictions for concentrated Kondo systems.

Measurements of the electrical resistivity versus x and temperature T, for 1.5≤T≤300 K for the fcc system Ce(SnxPb1−x)3 are reported. CeSn3 has been shown to be a strongly mixed valent system with an average occupation number of the Ce 4f level nf of ∼0.4 at low temperatures. The electrical resistivity for Ce(SnxPb1−x)3 is compared to that obtained for other Ce based mixed valent–trivalent systems and to the predictions of the Newns and Hewson theory. These comparisons suggest that Ce(SnxPb1−x)3 is mixed valent for x≳0.5 and the scaling of the resistivity supports the previous result that CeSn3 is strong mixed valent with nf≂0.4.

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