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Electron transport properties of double delta-doped GaAs structures based on high electron mobility single delta-doped layers with a sheet concentration of 3×1012 cm−2 have been investigated for spacer thicknesses up to 1100 Å at 77 and 300 K. At an optimized spacer thickness of about 200 Å, a maximum in conductivity is observed, which exceeds the conductivity of a single delta-doped layer with the same total concentration by 30% and 20% at 300 and 77 K. The mobility and concentration as a function of spacer thickness are also presented and analyzed.

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