Erratum: Shallow donor states near a semiconductor-insulator-metal interface [Phys. Rev. B 80, 035329 (2009)]

The lowest energy electronic states of a donor located near a semiconductor-insulator-metal interface are investigated within the effective mass approach. The effect of the finite thickness of the insulator between the semiconductor and the metallic gate on the energy levels is studied. The lowest energy states are obtained through a variational approach, which takes into account the influence of all image charges that arise due to the presence of the metallic and the dielectric interfaces. We compare our results with a numerical exact calculation using the finite element technique.

The binding energy of a hydrogen‐like impurity in a thin size‐quantized wire of A3B5‐type semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when the wire radius is less than the Bohr radius of the impurity, the nonparabolicity of the dispersion law of charge carriers leads to a considerable increase of the binding energy.

The binding energy of the ground state of charged and neutral exciton-donor complexes in a semiconductor quantum dot (QD) has been calculated as a function of the radius of the QD, using models with both an infinite and a finite potential barrier. The theoretical analysis is carried out using a variational approach in the framework of the adiabatic approximation. The behaviour of the binding energy of the complexes with the decrease of the radius of the QD is discussed. IntroductionIn quantum dots (QDs) as well as in three-dimensional semiconductors optical excitation can give rise to excitons, biexcitons and exciton -impurity bound complexes. The possibility of the existence of these complexes of quasiparticles in bulk semiconductors was investigated by Lampert [1]. In three-dimensional semiconductors the binding energies of the complexes of the quasiparticles are generally low and their existence depends on specific stability conditions [2]. More favourable conditions for the existence of these complexes are realized in two-dimensional systems. The formation of ions of biexcitons, biexcitons and exciton-donor complexes in two-dimensional systems has been theoretically investigated [3]. A variational calculation of the ground state of neutral and charged excitons in single quantum wells (QWs) was presented in [4]. Biexciton-induced absorption in InGaAs QWs in pumpprobe experiments was investigated in [5]. Negatively charged trions have been experimentally investigated for ZnSe QWs embedded in ternary barriers structures [6]. In a QD due to strong overlapping between the wave functions of the electrons and holes the complexes of quasiparticles become more stable in comparison with bulk and two-dimensional semiconductors [7]. The binding energy of an exciton bound to an ionized donor in a QD with a finite barrier was calculated in [8] using a perturbation method, which is valid only for small-radius QDs. The same problem was investigated in [9] assuming an infinite potential barrier for the QD using a variational method with a complicated ten-term trial wave function, which did not give good results for small-and intermediate-radius QDs.In this paper, in the framework of the adiabatic approximation, we develop a clear method for obtaining analytical expressions for the binding energy of charged and neutral exciton-donor complexes in semiconductor QDs (using models with both an infinite and a finite potential barrier), which gives good results for all values of the QD radius.

The binding energy of a hydrogen-like impurity in a quantum well wire (QWW) of A 3 B 5 -type semiconductors with Kane's dispersion law in a magnetic field B parallel to the wire axis has been calculated as a function of the radius of the wire and magnitude of B, using a variational approach. It is shown that the nonparabolicity of the dispersion law leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid nonlinear growth of binding energy with B.