In present work the explosive thermal evaporation was used to form heteroepitaxial InSb films on GaAs (100) substrates. The investigation results of phase composition, orientation of crystallites, electrical and magnetic properties are presented. It is shown that heteroepitaxial InSb films form in the deposition temperature range of 375 -410 °C. At lower deposition temperatures, InSb films have a polycrystalline structure. The obtained heteroepitaxial InSb films have high values of the Hall potential (more than 0.5 -0.6 V), the values of the Hall mobility of the charge carriers are in the range of (16 -19) ×10 3 cm 2 / (V×s).