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Results of experiments on the effect of fast-pile-neutron irradiation on the photoelectrical properties of CdS single crystals are discussed. It is shown that the fast neutrons introduce defects into the CdS which give rise to: (i) electron levels at Ec-0.44, Ec-0.5, Ec-0.6 and Ec-0.9 eV; (ii) defect clusters where the radius of the effective space-charge region is approximately 300 AA; (iii) a potential barrier at 0.40+or-0.05 eV. It is shown that the level at Ec-0.9 eV arises from Frenkel defects in the cadmium sublattice. The decay time tau of the photocurrent after irradiation increases approximately 106 times after a neutron dose of 2*1018 n cm-2 and also increases when the temperature increases, with an activation energy of 0.5 eV. A model is proposed in this paper to explain both the anomalous temperature dependence of tau , and the photoconductivity spectrum.

In CdS‐Einkristallen kann eine inhomogene Verteilung schneller s‐Rekombinationszentren vorliegen, die zu einer inhomogenen Leitfähigkeitsverteilung über die Probenlänge führt.

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Durch Messung der Leitfähigkeitsänderungen wird gezeigt, daß mit Ga oder In dotierte CdS‐Einkristalle bei Einwirkung von Licht oder γ‐Strahlung (°°Co) eine langzeitig reversible Steigerung der Empfindlichkeit gegenüber Strahlung besitzen.