Aluminium nitride films have been deposited on glass substrates by ion plating under RF glow and nitrogen atmosphere in a vacuum of 2 x Torr. Current-voltage characteristics of these aluminium nitride films with aluminium electrodes forming a MIM sandwich structure have been studied for films of different thicknesses at various temperatures. The conduction mechanism is discussed.

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Stearic acid (CH~-(CHZ)I~-COOH) films were deposited by thermal evaporation under vacuum (10-6 Torr). The nature of the film was analysed by x-ray diffraction. Thin-film capacitors were formed as an aluminium-stearic-acid-aluminium structure. The effect of thickness, temperature and frequency on dielectric parameters such as dielectric constant, capacitance, dielectric loss and temperature coefficient of capacitance have been studied and the results are discussed. Various characteristics of vacuum evaporated stearic acid thin film capacitors have been evaluated.

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