Chemical bath deposition (CBD) is one of the most used methods for CdS thin films deposition, but nevertheless, the by-product from the reaction constitutes a source of gross contamination. To reduce these residues, shallow-CBD (S-CBD) is proposed as an alternative method. Albeit this method only requires 25% of solution compared to traditional-CBD (T-CDB), making this method suitable to be used in device fabrication technology. In this work, a comparison between both techniques idone through the optical (UV-vis), structural (X-ray diffraction), morphology (scanning electron microscopy), and electrical properties such as four-point resistivity and temperature-current dependence from CdS layers analysis, deposited by S-CBD and T-CBD, is reported.