A technique is presented to simultaneously diffuse boron and phosphorus in silicon, and grow an insitu passivating oxide in a single furnace step. It is shown that limited solid doping sources made from P and B Spin-On Dopant (SOD) films can produce optimal n+ and p' profiles simultaneously without the deleterious effects of cross doping. A high quality passivating oxide is grown in-situ beneath the thin (-60 A) diffusion lass, resulting in low J, values below 100 fNcm for transparent (-100 W o ) phosphorus and boron diffusions. For the first time it is shown that impurities present in the boron SOD film can be effectively filtered out by employing separate source wafers, resulting in bulk lifetimes in excess of 1 ms for the sample wafers. The degree of lifetime degradation in the sources is related to the gettering efficiency of boron in silicon. This novel simultaneous diffusion, in-situ oxidation, impurity filtering and gettering technique was successfully used to produce 20.3% Fz, and 19.1% Cz solar cells, in one furnace step. 9