Nanometer-sized multijunction arrays are expected to exhibit a large Coulomb blockade effect. However, up to now, only highly disordered arrays can be fabricated. In this article, we evaluate the consequences of disorder on the dispersion of the device characteristics. We show that, as observed for regular arrays, the threshold voltage Vth increases with the length of the multijunction array. At very low temperature, the Vth dispersion is small. Conversely, at higher temperature, a large dispersion in Vth is observed. We evidence the importance of the different array parameters with respect to the device characteristics. We show that the crucial parameters are the tunnel resistances and, therefore, for a two-dimensional array, the total resistance of the minimal resistance path is the most relevant parameter.

We have shown that for a one-dimensional multijunction array with a broad junction length distribution, we can increase the mean threshold voltage Vth for a given maximal tunnel resistance without increasing the scatter of Vth. For two-dimensional arrays we can increase strongly the output of devices which do not behave as open circuits, without any loss on the scatter on Vth, and still increase the latter with respect to a single-island device. The experimental background which justified the calculation will be described, as our model needs the experimental distribution of the island dimensions and junction lengths. Such a result may either show a way to increase the threshold voltages for a given technology, or allow for larger and therefore more controllable dimensions, or even extend the choice of materials.

In this paper, we report on a process to prepare gold nanoparticle stripes on SiO(2) by convective/capillary assembly without any patterning of the substrate. Electrical devices were then fabricated using stencil lithography in order to avoid any contamination. I(V) measurements at room temperature show that these stripes have an ohmic behavior between +/- 0.5 V with a resistivity ranging from one to two orders higher than the gold bulk value. Furthermore, I(V) and I(t) measurements reveal current fluctuations that were interpreted in terms of charging and discharging of nanoparticle islands leading to a very large electrostatic perturbation of current conduction paths. Unconventional relative amplitudes of up to 99% RTS fluctuations were observed.

The purpose of this paper is to study single electron charging of a floating gate composed of nanocrystals in a metal-oxide-semiconductor transistor. We present a three-dimensional model of electron tunneling into quantum islands that are spherical in shape. This model can be numerically solved through a two-dimensional finite element approach. In this way, extensive and accurate numerical experimentations can be carried out due to the reduced computer time cost. The curves of tunneling time versus bias voltage exhibit complex serrated shapes, related to both the energy subbands of the channel and the energy states of the nanocrystal. The results are discussed for different channel doping densities.

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