Ternary compound semiconductor CuInSeS film has been deposited spray pyrolytically using aqueous solution containing CuCl2, InCl2, (H2NCSNH2) and SeO2. Structural characterization of the deposited film has been carried out using X-ray diffraction technique. The chalcopyrite structure of the film was confirmed with 112 preferred orientations. The films were polycrystalline. The resistivity of the film was measured for temperature ranging from 77 K to 473 K. The activation energy values were calculated from the Arrhenius plot. In the low temperature region conduction takes place through variable range hopping mechanism. The Hall mobility and carrier concentration at room temperature were calculated using the Van der Pauw-Hall method.

Spray pyrolysis is one of the most convenient, economical, inexpensive and simple methods for depositing large area semiconducting thin films. Semiconducting ternary CuInS 2 thin films have been deposited onto the glass substrate by varying substrate temperature from 275 0 C, at the interval of 25 to 350 0 C by using aqueous solution of Cupric chloride, Indium trichloride and thiourea of 0.02 M and Seems to be one of the more important parameters affecting the physical properties of the semiconductor. The lattice parameter a and c at room temperature of the tetragonal unit cell were calculated for all these samples by Bruker AXS D8 Advance X-ray diffraction (XRD) techniques with Cu K α (wavelength = 1.5418 Å) radiation.Conductivity of thin films determined by Four Probe method and hot probe technique wasdetermined to exhibit ptype conductivity. Due to temperature effect, shows the atoms are arrange regular in compound of these samples prepared at various temperatures 250, 300 and 350 0 C. As the films are not doped intentionally defect observed in intrinsic nature operative to be produced by Sulphur interstitials. Grain sizes were studied by Scanning Electron Microscope.

Polycrystalline CuInS 2 thin films were grown by Spray pyrolysis method. This films have been deposited onto the glass substrate by varying substrate temperature from 275 0 C, at the interval of 25 to 350 0 C by using aqueous solution of Cupric chloride, Indium tri-chloride and thiourea of 0.02 M and Seems to be more important parameters affecting physical properties of the semiconductor. On account for the temperature dependent optical properties of polycrystalline CuInS 2 thin films, grain boundary states were operative in nature. The values of absorption coefficient, extinction coefficient, refractive index, and dielectric constant have been calculated from the optical measurements. The prepared films at different substrate temperatures were found to have high transmittance (76 %) with the lowest thickness approximately t = 0.126 μm and at low transmittance (50 %) of the films with highest thickness nearly equal to t = 0.2163 μm. Due to temperature variation, the atoms are arrange regular in manner compound of CuInS 2 films are investigates. As the films are not doped intentionally, defect observed in intrinsic nature by Sulphur interstitials. The most significant results in present study, the temperature varied with thickness of the film can be used to modify the optical band gap, extinction coefficient, refractive index and real-imaginary part of dielectric constants of CuInS 2 thin films.

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