The electrical properties of dislocations and grain boundaries (GB) in directionally solidified polycrystalline silicon were extensively studied as a function of the carbon, oxygen, and nitrogen content, as well as of the relative grain orientation. As a first result of this study we obtained the experimental evidence that the oxygen and carbon content are not independent variables of the material. Therefore, the density and the electrical activity of dislocations are shown to be strongly dependent on the amount of oxygen‐carbon compensation. As a second result, experimental evidence was also achieved which demonstrated that grain boundaries are strongly passivated and that recombination losses at GB do not present any relevant relationship with mutual crystallographic orientations of the grains. It appears, therefore, that a careful choice of the growth and postgrowth conditions yields a material which behaves like crucible grown single‐crystal silicon.

The electrical activity of grain boundaries (GB’s) in polycrystalline silicon is strongly affected by heat treatments, which are known to induce the segregation of oxygen. The large, quantitative variations of the electrical activity of GB’s observed experimentally, which are a function not only of the heat treatments but also of the carbon and oxygen content of the specific sample examined, could not be explained however, without assuming that carbon and oxygen play a synergistic role. We demonstrate in this work, by using secondary ion mass spectrometry, that oxygen and carbon segregate simultaneously, albeit spatially resolved, at grain boundaries. This result appears to be of major importance when interpreting electron or light beam induced current profiles at grain boundaries in polycrystalline silicon.

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