We address a discrepancy between different computations of η/s (shear viscosity over entropy density) of hadronic matter. Substantial deviations of this coefficient are found between transport approaches mainly based on resonance propagation with finite lifetime and other (semi-analytical) approaches with energy-dependent cross-sections, where interactions do not introduce a timescale. We provide an independent extraction of this coefficient by using the newly-developed SMASH (Simulating Many Accelerated Strongly interacting Hadrons) transport code, which is an example of a mainly resonance-based approach. We compare the results from SMASH with numerical solutions of the Boltzmann equation for simple systems using the Chapman-Enskog expansion, as well as previous results in the literature. Our conclusion is that the hadron interaction via resonance formation/decay strongly affects the transport properties of the system, resulting in significant differences in η/s with respect to other approaches where binary collisions dominate. We argue that the relaxation time of the system -which characterizes the shear viscosity-is determined by the interplay between the mean-free time and the lifetime of resonances. We show how an artificial shortening of the resonance lifetimes, or the addition of a background elastic cross section nicely interpolate between the two discrepant results. arXiv:1709.03826v1 [nucl-th]

Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect transistors (TFETs) are fabricated. Tilted dopant implantation using the gate as a shadow mask allows self-aligned formation of p-i-n TFETs. The steep junctions formed by dopant segregation at low temperatures improve the band-to-band tunneling, resulting in higher oncurrents of n- and p-TFETs of >10 μA/μm at VDS = 0.5 V. The subthreshold slope for n-channel TFETs reaches a minimum value of 30 mV/dec, and is <60 mV/dec over one order of magnitude of drain current. The first sSi NW complementary TFET inverters show sharp transitions and fairly high static gain even at very low VDD = 0.2 V. The first transient response analysis of the inverters shows clear output voltage overshoots and a fall time of 2 ns at VDD = 1.0 V

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