We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high-electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.

The broad spectrum of electronic and optical properties exhibited by oxides offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Here we describe the use of reactive molecular‐beam epitaxy and pulsed‐laser deposition to synthesize functional oxides, including ferroelectrics, ferromagnets, and materials that are both at the same time. Owing to the dependence of properties on direction, it is often optimal to grow functional oxides in particular directions to maximize their properties for a specific application. But these thin film techniques offer more than orientation control; customization of the film structure down to the atomic‐layer level is possible. Numerous examples of the controlled epitaxial growth of oxides with perovskite and perovskite‐related structures, including superlattices and metastable phases, are shown. In addition to integrating functional oxides with conventional semiconductors, standard semiconductor practices involving epitaxial strain, confined thickness, and modulation doping can also be applied to oxide thin films. Results of fundamental scientific importance as well as results revealing the tremendous potential of utilizing functional oxide thin films to create devices with enhanced performance are described.

Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties. Andreev reflection measurements reveal that the spin polarization in doped epitaxial EuO films exceeds 90%, demonstrating that EuO is a half-metal even when highly doped. Furthermore, EuO is epitaxially integrated with silicon and GaN. These results demonstrate the high potential of EuO for spintronic devices.