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Al nanostructured coatings are the promising alternative to a tin‐doped indium oxide film (ITO) as transparent conductive electrodes. In this paper, we describe the fabrication of Al nanostructured coatings by electrochemical anodization of aluminum deposited by magnetron sputtering on a glass substrate. The process of anodization is strictly controlled by the characteristic changes of process parameters, followed by selective chemical etching of aluminum oxide. We proposed the model for Al nanostructured coatings describing the dependences of their optical transmittance and surface resistance on the characteristic dimensions of the network structure.

The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility is analyzed using the Hall method. The effect of annealing in vacuum, an oxygen atmosphere, and a nitrogen atmosphere on the grain size of an IGZO film was investigated. The resulting layers are characterized by high mobility of charge carriers, which allows their use in the manufacture of new-generation LCD and OLED displays.

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