The first study of the thin film system metal-germaniummonosulfide-metal was performed by Yabumoto /1/, who determined the thermal activation energy 0.84 eV from the I-T characteristics and the band gap 1.80 eV from the maximum of photoconductivity. Detailed investigations on the kinetics of preparation of thin GeS films /2/ a s well a s of their dielectric properties were carried out recently in this laboratory /3/. Some parameters of GeS thin films a r e determined: dielectric constant /3/, effective electron mass in the c a r r i e r band /4/, and lifetime and mobility of the electron /5/.

The kinetics of the vacuum deposition of germanium monosulphide films on glass substrates is investigated. The conductivity of samples not annealed and annealed in an O2, N2, and moist air atmosphere was measured in air and in vacuum. The mean value of the activation energy Eg = (1.71 ± 0.04) eV is independent of the medium and the sample treatment.

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