In this paper, first, FDTD, Semi-Implicit Method for Pressure Linked Equations (SIMPLE), Monte Carlo and Radiative Energy Absorption Distribution (READ) methods are combined to calculate electromagnetic field and all the heat transfer phenomena of heat transport, heat transfer by air convection and heat radiation (It is called FDTD-SIMPLE-MR method.). The temperature distribution of λ/4 type EM-absorber using resistive film under high power injection is calculated using FDTD-SIMPLE-MR method and a traditional method. Next, the high power injection experiment is conducted using an absorber and high power RF instruments to get the temperature distribution experimentally. Finally, the calculated and measured temperature distributions of the absorber are compared. As a result, the calculated temperature distribution by FDTD-SIMPLE-MR method agrees well with the measured one and the validity of FDTD-SIMPLE-MR method is confirmed.
Al-shorted WSix/Si gate performance in high-frequency band Si power MOSFETs is analyzed with Process/Device/Circuit continuous simulation. We confirm that the Al-shorted WSix/Si (400 nm height) gate can be performed well even in the large-signal operation at highfrequencies.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.