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Dark and light IV characteristics as well as spectral curves of planar Niporous siliconp-SiNi heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 810 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n +-p-i-p + avalanche photodiodes.

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