GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N2 flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.

A study of the electrochemical characteristics of titanium oxyfluoride obtained with the direct interaction of titanium with hydrofluoric acid is reported. Two materials T1 and T2 synthesized under different conditions in which some TiF3 is formed in T1 are compared. Both materials exhibit conversion-type anode properties. Based on the analysis of the charge–discharge curves of the half-cell, a model is proposed according to which the first electrochemical introduction of lithium occurs in two stages: the first stage is the irreversible reaction resulting in a reduction in Ti4+/3+, and the second stage is the reversible reaction with a change in the charge state Ti3+/1.5+. The difference in material behavior is quantitative: T1 has a higher reversible capacity but lower cycling stability and a slightly higher operating voltage. The Li diffusion coefficient determined from the CVA data for both materials averages 1.2–3.0 × 10−14 cm2/s. A distinctive feature of titanium oxyfluoride anodes is the asymmetry in kinetic characteristics that revealed themselves during lithium embedding and extraction. In the long cycling regime, the excess of Coulomb efficiency over 100% was found in the present study.

No abstract

No abstract

No abstract