No abstract

A virtual saturation of the supply of holes leading to an injection level dependent reduction in surface recombination velocity has been shown to be responsible for the improved performance of recent high efficiency silicon solar cells. By fabricating test cells taking advantage of this and other recombination reduction mechanisms, improved open-circuit voltages of 717 mV have been independently confirmed for experimental silicon cells. These voltages correspond to saturation current densities of 25 fA/cm2 at 25 °C, also the lowest demonstrated for a silicon junction device. Further improvement in both voltage and cell efficiency is expected to result from this work.

Abstract-With big projects implementation, such as space station and cargo spacecraft in orbit increasing the dosage of the secondary power supply, the requirement of increasing the for reliability, used in great quantities however on-orbit secondary power supply of power MosFET can only conservative derating use, no effective protection methods. Based on the half bridge topology of power circuit of MosFET possible failure mode analysis put forward a kind of power MosFET saturation detection circuit. Circuit is characterized by low detection threshold lag, shut off the fast response, junction temperature compensation. Refund saturation in this paper, the detection circuit is analyzed and pointed out that the stray inductance of moderate packaging cause impact on short circuit detection threshold.