Crucial commercial and space applications require the detection of broadband ultraviolet (UV) rays spanning from UV-A to UV-C. In this study, the authors demonstrate a broadband UV photodetector employing a p-type NiOx layer and an n-type β-Ga2O3 heterostructure in PIN configuration for the first time. Simulations are conducted to optimize the doping concentration and thickness of the NiOx layer, ensuring that (a) a reasonable depletion width is maintained within the NiOx layer for UV-A and UV-B light absorption; (b) anode ohmic contacts are formed on the nondepleted NiOx film, and (c) >70% of the UV-C light is absorbed by β-Ga2O3. The optimized NiOx/ β-Ga2O3 PIN photodiode exhibits good responsivity to incident light wavelengths in the UV-A, UV-B, and UV-C regions. While the NiOx layer is considered to be responsible for providing good photoresponsivity in the UV-A and UV-B regions, a highly resistive (near-intrinsic) β-Ga2O3 layer is required for the absorption of incident UV-C light. A record detectivity of >1011 cmHz0.5W−1 for the UV-B and UV-C regions and >1010 cmHz0.5W−1 for the UV-A region is observed in the NiOx/ β-Ga2O3 heterostructure PIN photodiode during the self-powered operation. The results presented in this study are promising and instigate device design strategies for (ultra)wide bandgap semiconductor-based broadband UV PIN photodetectors.

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